N-Channel 240V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 240V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 240V 200mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET N-CH 240V 200MA SOT23-3
Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Product overview: TN2404K-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 0.2A, 240V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 0.2A, 240V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TN2404K-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1110802-TN2404K-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 240V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 300mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N CHANNEL MOSFET, 240V, 200MA, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:200mA; On Resistance Rds(on):2.2ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, N CH , 240V, 200MA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.65V; Power RoHS Compliant: Yes
MOSFET N-CH 240V 200MA SOT23-3
MOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TN2404K-T1-GE3TR-ND | TN2404K-T1-GE3 | 278-TN2404K-T1-GE3 | 1110802-TN2404K-T1-GE3 | 8187647 | 8187647P | 79R5407 | 61AC2430 | TN2404K-T1-GE3 | TN2404K-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 0.2A 240V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TN2404K-T1-GE3 | MOSFETs | MOSFETs | N Channel Mosfet, 240V, 200Ma, Sot-23; Transistor Polarity Vishay | Mosfet, N Ch , 240V, 200Ma, Sot-23; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; Sot-23 (to-236) | SOT23; SOT-23 | TO-3; SOT23 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 240 volts | 240 volts | ||||||||
| IDSS | 200 milliamps | 200 milliamps | 200 milliamps |
