The TCDT1100G is a phototransistor optocoupler with a gallium arsenide infrared emitter in a 6-pin DIP package with a 400 mil lead spacing. It provides 5000 V RMS isolation, with a collector-emitter voltage rating of 32 V and a current transfer ratio greater than 40%. The device features no base connection for improved noise immunity, complies with RoHS and WEEE directives, and meets UL1577, VDE0884, and IEC 60950 safety standards for reinforced isolation. It is qualified for operation from -55 °C to +110 °C ambient temperature and has a creepage distance and Comparative Tracking Index (CTI ≥ 275) suitable for high-voltage environments.
1-CH DC Optocoupler, 5kV Isolation, 32V VCEO, 6-Pin PDIP Product overview: TCDT1100G from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5kV, 32V. Search-friendly keywords include transistor, BJT, switching, amplification, 5kV, 32V, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-TCDT1100G can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-TCDT1100G |
| Product Name | 5kV 32V Bipolar Transistor |
| IC(max) | 50 milliamps |
