Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUU06N10-225L SUU06N10-225L

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965490-SUU06N10-225L Drain to Source Voltage (Vdss): 100 V Power Dissipation: 20 W Weight: 3.949996 g Number of Pins: 3 Rise Time: 8 ns Fall Time: 9 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 20 W Turn-On Delay Time: 7 ns Continuous Drain Current (ID): 6.5 A Drain to Source Breakdown Voltage: 100 V Turn-Off Delay Time: 8 ns Drain to Source Resistance: 200 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965490-SUU06N10-225L Drain to Source Voltage (Vdss): 100 V Power Dissipation: 20 W Weight: 3.949996 g Number of Pins: 3 Rise Time: 8 ns Fall Time: 9 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 20 W Turn-On Delay Time: 7 ns Continuous Drain Current (ID): 6.5 A Drain to Source Breakdown Voltage: 100 V Turn-Off Delay Time: 8 ns Drain to Source Resistance: 200 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUU06N10-225L - 965490-SUU06N10-225L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUU06N10-225L
965490-SUU06N10-225L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUU06N10-225L 965490-SUU06N10-225L
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965490-SUU06N10-225L Drain to Source Voltage (Vdss): 100 V Power Dissipation: 20 W Weight: 3.949996 g Number of Pins: 3 Rise Time: 8 ns Fall Time: 9 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 20 W Turn-On Delay Time: 7 ns Continuous Drain Current (ID): 6.5 A Drain to Source Breakdown Voltage: 100 V Turn-Off Delay Time: 8 ns Drain to Source Resistance: 200 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 965490-SUU06N10-225L
Drain to Source Voltage (Vdss): 100 V
Power Dissipation: 20 W
Weight: 3.949996 g
Number of Pins: 3
Rise Time: 8 ns
Fall Time: 9 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Non-Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 20 W
Turn-On Delay Time: 7 ns
Continuous Drain Current (ID): 6.5 A
Drain to Source Breakdown Voltage: 100 V
Turn-Off Delay Time: 8 ns
Drain to Source Resistance: 200 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 965490-SUU06N10-225L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUU06N10-225L
V(BR)DSS 100 volts
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