Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP90N08-7M7P-E3 SUP90N08-7M7P-E3

Description
Manufacturer: Vishay Win Source Part Number: 212459-SUP90N08-7M7P -E3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 4250pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP90N08-7M7P-E3 - 212459-SUP90N08-7M7P-E3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP90N08-7M7P-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 212459-SUP90N08-7M7P -E3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 4250pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP90N08-7M7P-E3 - 212459-SUP90N08-7M7P-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP90N08-7M7P-E3
212459-SUP90N08-7M7P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP90N08-7M7P-E3 212459-SUP90N08-7M7P-E3
Manufacturer: Vishay Win Source Part Number: 212459-SUP90N08-7M7P -E3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 4250pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 212459-SUP90N08-7M7P-E3
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 4250pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP90N08-7M7P-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP90N08-7M7P-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP90N08-7M7P-E3
MOSFET N-CH 75V 90A TO220AB

MOSFET N-CH 75V 90A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 212459-SUP90N08-7M7P-E3 SUP90N08-7M7P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP90N08-7M7P-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 75 volts
PD 3750 to 208300 milliwatts
Unlock Full Specs
to access all available technical data