Vishay Precision Group Single FETs, MOSFETs SUP90N04-3M3P-GE3

N-Channel 40V 90A (Tc) 3.1W (Ta), 125W (Tc) Through Hole TO-220AB

Manufacturer: Vishay
Win Source Part Number: 1104138-SUP90N04-3M3P-GE3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 131nC @ 10V
Max Input Capacitance: 5286pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 40V 90A TO220AB Product overview: SUP90N04-3M3P-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP90N04-3M3P-GE3 can be used for catalog matching and distributor lookup.