Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SUP90220E-GE3

Description
Win Source Part Number: 1277683-SUP90220E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP90220 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277683-SUP90220E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SUP90220E-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - SUP90220E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP90220E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay - 15AC8720 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1277683-SUP90220E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP90220 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277683-SUP90220E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277683-SUP90220E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277683-SUP90220E-GE3
Win Source Part Number: 1277683-SUP90220E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP90220 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277683-SUP90220E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: ThunderFET®
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP90220
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUP90220E-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUP90220E-GE3
Single FETs, MOSFETs SUP90220E-GE3
MOSFET N-CH 200V 64A TO220AB

MOSFET N-CH 200V 64A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - SUP90220E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP90220E-GE3-ND
Single FETs, MOSFETs SUP90220E-GE3-ND
N-Channel 200V 64A (Tc) 230W (Tc) Through Hole TO-220AB

N-Channel 200V 64A (Tc) 230W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP90220E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP90220E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP90220E-GE3
MOSFET N-CH 200V 64A TO220AB

MOSFET N-CH 200V 64A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SUP90220E-GE3
MOSFET SUP90220E-GE3
MOSFET 200V Vds 20V Vgs TO-220AB

MOSFET 200V Vds 20V Vgs TO-220AB

Buy Now Datasheet
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay - 15AC8720 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay
15AC8720
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay 15AC8720
MOSFET, N-CH, 200V, 64A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 200V, 64A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277683-SUP90220E-GE3 SUP90220E-GE3 SUP90220E-GE3-ND SUP90220E-GE3 SUP90220E-GE3 15AC8720
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
IDSS 64000 milliamps 64000 milliamps
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