MOSFET N-CH 200V 64A TO220AB
Win Source Part Number: 1277683-SUP90220E-GE
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP90220
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 200V 64A (Tc) 230W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 64A TO220AB
MOSFET, N-CH, 200V, 64A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 200V Vds 20V Vgs TO-220AB
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUP90220E-GE3 | 1277683-SUP90220E-GE3 | SUP90220E-GE3-ND | SUP90220E-GE3 | 15AC8720 | SUP90220E-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 200 volts | |||||
| IDSS | 64000 milliamps | 64000 milliamps | ||||
| PD | 230000 milliwatts |
