Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SUP90220E-GE3

Description
Win Source Part Number: 1277683-SUP90220E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP90220 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1277683-SUP90220E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP90220 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277683-SUP90220E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277683-SUP90220E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277683-SUP90220E-GE3
Win Source Part Number: 1277683-SUP90220E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 230W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP90220 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277683-SUP90220E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: ThunderFET®
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP90220
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUP90220E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP90220E-GE3-ND
Single FETs, MOSFETs SUP90220E-GE3-ND
N-Channel 200V 64A (Tc) 230W (Tc) Through Hole TO-220AB

N-Channel 200V 64A (Tc) 230W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - SUP90220E-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUP90220E-GE3
Single FETs, MOSFETs SUP90220E-GE3
MOSFET N-CH 200V 64A TO220AB

MOSFET N-CH 200V 64A TO220AB

Supplier's Site Datasheet
MOSFET Transistor 278-SUP90220E-GE3
Power Field-Effect Transistor Product overview: SUP90220E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP90220E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor Product overview: SUP90220E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP90220E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 200V Vds 20V Vgs TO-220AB

MOSFET 200V Vds 20V Vgs TO-220AB

Buy Now Datasheet
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay - 15AC8720 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay
15AC8720
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay 15AC8720
MOSFET, N-CH, 200V, 64A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 200V, 64A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP90220E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP90220E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP90220E-GE3
MOSFET N-CH 200V 64A TO220AB

MOSFET N-CH 200V 64A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277683-SUP90220E-GE3 SUP90220E-GE3-ND SUP90220E-GE3 278-SUP90220E-GE3 SUP90220E-GE3 15AC8720 SUP90220E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Transistor MOSFET Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
IDSS 64000 milliamps 64000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SC2612 - 906350-2SC2612 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Single IGBTs - 448-AIGB50N65F5ATMA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tape Reel
Structure NPT
View Details
3 suppliers
GaAs Fet Switches - KS206 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details