Manufacturer: Vishay
Win Source Part Number: 057029-SUP85N15-21-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 85A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-CH MOSFET 150V 85A 21mR TO-220AB Product overview: SUP85N15-21-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP85N15-21-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 85A TO220AB
N-Channel 150V 85A (Tc) 2.4W (Ta), 300W (Tc) Through Hole TO-220AB
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:85A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:2.4W; MSL:-RoHS Compliant: Yes
MOSFET N-CH 150V 85A TO220AB
MOSFET 150V 85A 300W 21mohm @ 10V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 057029-SUP85N15-21-E3 | 278-SUP85N15-21-E3 | SUP85N15-21-E3 | SUP85N15-21-E3-ND | 06J8579 | SUP85N15-21-E3 | SUP85N15-21-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N15-21-E3 | 150V 85A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 2400 to 300000 milliwatts | 2400 milliwatts | 2400 milliwatts | 2400 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
