Manufacturer: Vishay
Win Source Part Number: 133857-SUP85N10-10-E
Packaging: Cut Reel
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 85A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 500
MOSFET N-CH 100V 85A TO220AB
N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB
N-CH MOSFET 100V 85A 10.5mR TO-220AB Product overview: SUP85N10-10-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP85N10-10-E3 can be used for catalog matching and distributor lookup.
TRANSISTOR, MOSFET; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:85A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(ON):0.012OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3V; POWER DISSIPATION PD:250W; ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 85A TO220AB
TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 85A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:85A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 133857-SUP85N10-10-E3 | SUP85N10-10-E3 | SUP85N10-10-E3-ND | 278-SUP85N10-10-E3 | 22259358 | SUP85N10-10-E3 | 74AC1984 | 06J8578 | SUP85N10-10-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N10-10-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 85A MOSFET Transistor | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor, Mosfet; Transistor Polarity Vishay | N Channel Mosfet, 100V, 85A, To-220Ab; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| PD | 3750 to 250000 milliwatts | 3750 milliwatts | 250000 milliwatts | 250000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-3; TO-220 |
