N-Channel 150V 128A (Tc) 375W (Tc) Through Hole TO-220AB
Power Field-Effect Transistor, 128A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SUP80090E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 128A, 150V, 0.011ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 128A, 150V, 0.011ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP80090E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 812392-SUP80090E-GE3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.4mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 95nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3425pF at 75V
Current - Continuous Drain (Id) at 25°C: 128A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Maximum Vgs: ±20V
MOSFET, N-CH, 150V, 128A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:128A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET 150V Vds 20V Vgs TO-220
MOSFET N-CH 150V 128A TO220AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SUP80090E-GE3-ND | 278-SUP80090E-GE3 | 812392-SUP80090E-GE3 | 86Y1094 | SUP80090E-GE3 | SUP80090E-GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 128A 150V 0.011ohm MOSFET Transistor | FETs - Single - SUP80090E-GE3 | Mosfet, N-Ch, 150V, 128A, 175Deg C, 375W; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-3 | TO-220; TO-220-3 | ||
| PD | 375000 milliwatts |
