Vishay Intertechnology, Inc. Single FETs, MOSFETs SUP75N03-04-E3

Description
N-Channel 30V 75A (Tc) 3.7W (Ta), 187W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 30V 75A (Tc) 3.7W (Ta), 187W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUP75N03-04-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP75N03-04-E3-ND
Single FETs, MOSFETs SUP75N03-04-E3-ND
N-Channel 30V 75A (Tc) 3.7W (Ta), 187W (Tc) Through Hole TO-220AB

N-Channel 30V 75A (Tc) 3.7W (Ta), 187W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP75N03-04-E3 - 1104134-SUP75N03-04-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP75N03-04-E3
1104134-SUP75N03-04-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP75N03-04-E3 1104134-SUP75N03-04-E3
Manufacturer: Vishay Win Source Part Number: 1104134-SUP75N03-04- E3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 250nC @ 10V Max Input Capacitance: 10742pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1104134-SUP75N03-04-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 187W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 250nC @ 10V
Max Input Capacitance: 10742pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP75N03-04-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP75N03-04-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP75N03-04-E3
MOSFET N-CH 30V 75A TO220AB

MOSFET N-CH 30V 75A TO220AB

Supplier's Site
MOSFET; TO-220 30V 75A 4MOHM - 70026316 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET; TO-220 30V 75A 4MOHM
70026316
MOSFET; TO-220 30V 75A 4MOHM 70026316
Features: 175°C Rated (Max. Junction Temperature) TrenchFET® Power MOSFETs

Features:

  • 175°C Rated (Max. Junction Temperature)
  • TrenchFET® Power MOSFETs
Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUP75N03-04-E3-ND 1104134-SUP75N03-04-E3 SUP75N03-04-E3 70026316
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP75N03-04-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET; TO-220 30V 75A 4MOHM
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB 250 nC @ 10 V TO-220
V(BR)DSS 30 volts 30 volts
PD 3700 to 187000 milliwatts 187000 milliwatts
Unlock Full Specs
to access all available technical data