Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SUP70090E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 100V, 0.0089ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 100V, 0.0089ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP70090E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 100V 50A (Tc) 125W (Tc) Through Hole TO-220AB
Manufacturer: Vishay Siliconix
Win Source Part Number: 810246-SUP70090E-GE3
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 125W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 8.9mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 50V
Current - Continuous Drain (Id) at 25°C: 50A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 100V 50A TO220AB
MOSFET 100V Vds 20V Vgs TO-220
MOSFET N-CH 100V 50A TO220AB
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SUP70090E-GE3 | SUP70090E-GE3-ND | 810246-SUP70090E-GE3 | SUP70090E-GE3 | SUP70090E-GE3 | SUP70090E-GE3 |
| Product Name | N-Channel 50A 100V 0.0089ohm MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - SUP70090E-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | ||
| PD | 125000 milliwatts | 125000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
