The Vishay N-Channel MOSFET (part number 75AH9270) is rated for a maximum drain-source voltage of 100V and can handle continuous drain currents up to 131A at a junction temperature of 150¬8C. It features a low on-state resistance of 0.0058Oc at a gate-source voltage of 10V, making it suitable for high-efficiency applications. The device has a maximum power dissipation of 200W and can operate at junction temperatures up to 175¬8C. It is compliant with RoHS standards and is designed for various applications including power supplies, synchronous rectification, DC/DC converters, and motor drive switches. The MOSFET is housed in a TO-220AB package, which facilitates effective thermal management.
MOSFET N-CH 100V 131A TO220AB Product overview: SUP70060E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 131A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 131A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP70060E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 811313-SUP70060E-GE3
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 200W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 5.8mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 81nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 3330pF at 50V
Current - Continuous Drain (Id) at 25°C: 131A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
N-Channel 100V 131A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET 100V Vds 20V Vgs TO-220
MOSFET N-CH 100V 131A TO220AB
MOSFET, N-CH, 100V, 131A, 175DEG C, 200W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SUP70060E-GE3 | 811313-SUP70060E-GE3 | SUP70060E-GE3-ND | SUP70060E-GE3 | SUP70060E-GE3 | 75AH9270 |
| Product Name | 100V 131A MOSFET Transistor | FETs - Single - SUP70060E-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 131A, 175Deg C, 200W Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0850 kS | |||||
| PD | 200 milliwatts | 200000 milliwatts |
