N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Manufacturer: Vishay Siliconix
Win Source Part Number: 811472-SUP70040E-GE3
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 5100pF at 50V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SUP70040E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 100V, 0.004ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 100V, 0.004ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP70040E-GE3 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1000V, 120A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 100V 120A TO220AB
MOSFET 100V Vds 20V Vgs TO-220
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUP70040E-GE3-ND | 811472-SUP70040E-GE3 | 278-SUP70040E-GE3 | 76Y1650 | SUP70040E-GE3 | SUP70040E-GE3 |
| Product Name | Single FETs, MOSFETs | FETs - Single - SUP70040E-GE3 | N-Channel 120A 100V 0.004ohm MOSFET Transistor | Mosfet, N-Ch, 1000V, 120A, To-220-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-3; TO-220 | TO-220; TO-220-3 | ||
| PD | 375000 milliwatts |
