Vishay Precision Group Single FETs, MOSFETs SUP70040E-GE3

Description
N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUP70040E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP70040E-GE3-ND
Single FETs, MOSFETs SUP70040E-GE3-ND
N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
FETs - Single - SUP70040E-GE3 - 811472-SUP70040E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SUP70040E-GE3
811472-SUP70040E-GE3
FETs - Single - SUP70040E-GE3 811472-SUP70040E-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 811472-SUP70040E-GE3 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 375W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 4mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 5100pF at 50V Current - Continuous Drain (Id) at 25°C: 120A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 811472-SUP70040E-GE3
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 4mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 5100pF at 50V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

Buy Now
Singapore, Singapore
N-Channel 120A 100V 0.004ohm MOSFET Transistor
278-SUP70040E-GE3
N-Channel 120A 100V 0.004ohm MOSFET Transistor 278-SUP70040E-GE3
Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SUP70040E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 100V, 0.004ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 100V, 0.004ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP70040E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SUP70040E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 100V, 0.004ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 100V, 0.004ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP70040E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1000V, 120A, To-220-3; Channel Type Vishay - 76Y1650 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1000V, 120A, To-220-3; Channel Type Vishay
76Y1650
Mosfet, N-Ch, 1000V, 120A, To-220-3; Channel Type Vishay 76Y1650
MOSFET, N-CH, 1000V, 120A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 1000V, 120A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V Vds 20V Vgs TO-220

MOSFET 100V Vds 20V Vgs TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP70040E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP70040E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP70040E-GE3
MOSFET N-CH 100V 120A TO220AB

MOSFET N-CH 100V 120A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SUP70040E-GE3-ND 811472-SUP70040E-GE3 278-SUP70040E-GE3 76Y1650 SUP70040E-GE3 SUP70040E-GE3
Product Name Single FETs, MOSFETs FETs - Single - SUP70040E-GE3 N-Channel 120A 100V 0.004ohm MOSFET Transistor Mosfet, N-Ch, 1000V, 120A, To-220-3; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-3; TO-220 TO-220; TO-220-3
PD 375000 milliwatts
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