MOSFET N-CH 100V 60A TO220AB Product overview: SUP60N10-18P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP60N10-18P-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1104133-SUP60N10-18P
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18.3 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 100V, 60A; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Product Range:- RoHS Compliant: Yes
MOSFET N-CH 100V 60A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SUP60N10-18P-E3 | 1104133-SUP60N10-18P-E3 | 35R0093 | SUP60N10-18P-E3 |
| Product Name | 100V 60A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP60N10-18P-E3 | N Channel Mosfet, 100V, 60A; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3750 milliwatts | 3750 to 150000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tube | TO-220; SOT3; TO-220AB | TO-3 | TO-220; TO-220-3 |
| Packing Method | Tube | Tape Reel; Reel - TR | Tube; Tube |
