Vishay Intertechnology, Inc. Single FETs, MOSFETs SUP60N10-16L-E3

Description
N-Channel 100V 60A (Tc) 150W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 100V 60A (Tc) 150W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Company
Product
Description
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Single FETs, MOSFETs - SUP60N10-16L-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP60N10-16L-E3-ND
Single FETs, MOSFETs SUP60N10-16L-E3-ND
N-Channel 100V 60A (Tc) 150W (Tc) Through Hole TO-220AB

N-Channel 100V 60A (Tc) 150W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP60N10-16L-E3 - 057018-SUP60N10-16L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP60N10-16L-E3
057018-SUP60N10-16L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP60N10-16L-E3 057018-SUP60N10-16L-E3
Manufacturer: Vishay Win Source Part Number: 057018-SUP60N10-16L- E3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3820pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 057018-SUP60N10-16L-E3
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3820pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N-CH 100V 60A TO220AB - 880-SUP60N10-16L-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 60A TO220AB
880-SUP60N10-16L-E3
MOSFET N-CH 100V 60A TO220AB 880-SUP60N10-16L-E3
MOSFET N-CH 100V 60A TO220AB

MOSFET N-CH 100V 60A TO220AB

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP60N10-16L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP60N10-16L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP60N10-16L-E3
MOSFET N-CH 100V 60A TO220AB

MOSFET N-CH 100V 60A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SUP60N10-16L-E3-ND 057018-SUP60N10-16L-E3 880-SUP60N10-16L-E3 SUP60N10-16L-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP60N10-16L-E3 MOSFET N-CH 100V 60A TO220AB Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 100 volts
PD 150000 milliwatts 150000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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