Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP60N02-4M5P-E3 SUP60N02-4M5P-E3

Manufacturer: Vishay
Win Source Part Number: 1104130-SUP60N02-4M5P-E3
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 4.5V
Max Input Capacitance: 5950pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 60A TO220AB Product overview: SUP60N02-4M5P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP60N02-4M5P-E3 can be used for catalog matching and distributor lookup.

N-Channel 20V 60A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB