Power Field-Effect Transistor, Product overview: SUP60020E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP60020E-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1181576-SUP60020E-GE
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP60020
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 80-V (D-S) MOSFET TO-220
N-Channel 80-V (D-S) MOSFET TO-220
N-Channel 80-V (D-S) MOSFET TO-220
N-Channel 80V 150A (Tc) 375W (Tc) Through Hole TO-220AB
MOSFET N-Channel 80 V (D-S) MOSFET
MOSFET N-CH 80V 150A TO220AB
MOSFET, N-CH, 80V, 150A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SUP60020E-GE3 | 1181576-SUP60020E-GE3 | 1885143P | 1885143 | SUP60020E-GE3-ND | SUP60020E-GE3 | SUP60020E-GE3 | 10AH1178 |
| Product Name | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| PD | 375000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | |||||||
| Package Type | TO-220; SOT3 | TO-220; TO-220 | TO-220; To-220ab | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 |
