Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SUP60020E-GE3

Description
Win Source Part Number: 1181576-SUP60020E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP60020 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Description
Win Source Part Number: 1181576-SUP60020E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP60020 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1181576-SUP60020E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1181576-SUP60020E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1181576-SUP60020E-GE3
Win Source Part Number: 1181576-SUP60020E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP60020 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1181576-SUP60020E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP60020
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUP60020E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP60020E-GE3-ND
Single FETs, MOSFETs SUP60020E-GE3-ND
N-Channel 80V 150A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 80V 150A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 1885143P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1885143P
MOSFETs 1885143P
N-Channel 80-V (D-S) MOSFET TO-220

N-Channel 80-V (D-S) MOSFET TO-220

Supplier's Site
MOSFETs - 1885143 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1885143
MOSFETs 1885143
N-Channel 80-V (D-S) MOSFET TO-220

N-Channel 80-V (D-S) MOSFET TO-220

Supplier's Site
MOSFETs - 1884929 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1884929
MOSFETs 1884929
N-Channel 80-V (D-S) MOSFET TO-220

N-Channel 80-V (D-S) MOSFET TO-220

Supplier's Site
Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay - 10AH1178 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay
10AH1178
Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay 10AH1178
MOSFET, N-CH, 80V, 150A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 80V, 150A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Channel 80 V (D-S) MOSFET

MOSFET N-Channel 80 V (D-S) MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP60020E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP60020E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP60020E-GE3
MOSFET N-CH 80V 150A TO220AB

MOSFET N-CH 80V 150A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1181576-SUP60020E-GE3 SUP60020E-GE3-ND 1885143P 1885143 10AH1178 SUP60020E-GE3 SUP60020E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFETs MOSFETs Mosfet, N-Ch, 80V, 150A, 175Deg C, 375W; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel
PD 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220 TO-220; To-220ab TO-3 TO-220; TO-220-3
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