Manufacturer: Vishay
Win Source Part Number: 212455-SUP57N20-33-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 57A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
N-Channel 200V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
N-CH MOSFET 200V 57A 33mR TO-220AB Product overview: SUP57N20-33-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP57N20-33-E3 can be used for catalog matching and distributor lookup.
MOSFET N-Channel 200V 57A TO220AB
MOSFET, N-CH, 200V, 57A, 175DEG C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:57A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 200V 57A TO220AB
Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 212455-SUP57N20-33-E3 | SUP57N20-33-E3-ND | 278-SUP57N20-33-E3 | 7085014 | 7085014P | 01AC5038 | SUP57N20-33-E3 | 880-SUP57N20-33-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP57N20-33-E3 | Single FETs, MOSFETs | 200V 57A MOSFET Transistor | MOSFETs | MOSFETs | Mosfet, N-Ch, 200V, 57A, 175Deg C, 300W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | ||||||
| PD | 3750 to 300000 milliwatts | 300000 milliwatts | 3750 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | TO-3 | TO-220; TO-220-3 |
