Vishay Precision Group MOSFETs SUP57N20-33-E3

Description
MOSFET N-Channel 200V 57A TO220AB
Request a Quote Datasheet
Description
MOSFET N-Channel 200V 57A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 7085014 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7085014
MOSFETs 7085014
MOSFET N-Channel 200V 57A TO220AB

MOSFET N-Channel 200V 57A TO220AB

Supplier's Site
MOSFETs - 7085014P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7085014P
MOSFETs 7085014P
MOSFET N-Channel 200V 57A TO220AB

MOSFET N-Channel 200V 57A TO220AB

Supplier's Site
MOSFETs - 1652816 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1652816
MOSFETs 1652816
MOSFET N-Channel 200V 57A TO220AB

MOSFET N-Channel 200V 57A TO220AB

Supplier's Site
Singapore, Singapore
200V 57A MOSFET Transistor
278-SUP57N20-33-E3
200V 57A MOSFET Transistor 278-SUP57N20-33-E3
N-CH MOSFET 200V 57A 33mR TO-220AB Product overview: SUP57N20-33-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP57N20-33-E3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 200V 57A 33mR TO-220AB Product overview: SUP57N20-33-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP57N20-33-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SUP57N20-33-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP57N20-33-E3-ND
Single FETs, MOSFETs SUP57N20-33-E3-ND
N-Channel 200V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

N-Channel 200V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP57N20-33-E3 - 212455-SUP57N20-33-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP57N20-33-E3
212455-SUP57N20-33-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP57N20-33-E3 212455-SUP57N20-33-E3
Manufacturer: Vishay Win Source Part Number: 212455-SUP57N20-33-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 57A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 212455-SUP57N20-33-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 57A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB - 880-SUP57N20-33-E3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB
880-SUP57N20-33-E3
Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB 880-SUP57N20-33-E3
Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB

Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB

Supplier's Site
Mosfet, N-Ch, 200V, 57A, 175Deg C, 300W; Channel Type Vishay - 01AC5038 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 57A, 175Deg C, 300W; Channel Type Vishay
01AC5038
Mosfet, N-Ch, 200V, 57A, 175Deg C, 300W; Channel Type Vishay 01AC5038
MOSFET, N-CH, 200V, 57A, 175DEG C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:57A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 57A, 175DEG C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:57A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP57N20-33-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP57N20-33-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP57N20-33-E3
MOSFET N-CH 200V 57A TO220AB

MOSFET N-CH 200V 57A TO220AB

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 7085014 7085014P 278-SUP57N20-33-E3 SUP57N20-33-E3-ND 212455-SUP57N20-33-E3 880-SUP57N20-33-E3 01AC5038 SUP57N20-33-E3
Product Name MOSFETs MOSFETs 200V 57A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP57N20-33-E3 Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB Mosfet, N-Ch, 200V, 57A, 175Deg C, 300W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
Package Type TO-220; To-220ab TO-220; TO-220 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3 TO-220; TO-220-3
Number of units in IC 1 1
PD 300000 milliwatts 3750 to 300000 milliwatts 3750 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFP4568 - 912285-AUIRFP4568 - Win Source Electronics
Specs
Polarity N-Channel
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247AC
View Details
8 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Package Type NI-650 Flanged
Power Gain 18.1 dB
View Details
2 suppliers