Vishay Intertechnology, Inc. Single FETs, MOSFETs SUP53P06-20-GE3

Description
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
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Description
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - SUP53P06-20-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP53P06-20-GE3-ND
Single FETs, MOSFETs SUP53P06-20-GE3-ND
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
60V 9.2A MOSFET Transistor
278-SUP53P06-20-GE3
60V 9.2A MOSFET Transistor 278-SUP53P06-20-GE3
MOSFET P-CH 60V 9.2A TO220AB Product overview: SUP53P06-20-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP53P06-20-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 9.2A TO220AB Product overview: SUP53P06-20-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP53P06-20-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-GE3 - 716463-SUP53P06-20-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-GE3
716463-SUP53P06-20-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-GE3 716463-SUP53P06-20-GE3
Manufacturer: Vishay Win Source Part Number: 716463-SUP53P06-20-G E3 Series: TrenchFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc) Part Status: Obsolete(EOL) Family Name: SUP53P06-20 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3500pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.1W (Ta), 104.2W (Tc) Rds On (Maximum) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): SPP80P06P; SPP80P06PXK; SPP80P06PBKSA1; Introduction Date: February 01, 1990 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 716463-SUP53P06-20-GE3
Series: TrenchFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Part Status: Obsolete(EOL)
Family Name: SUP53P06-20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-220AB
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3500pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 104.2W (Tc)
Rds On (Maximum) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): SPP80P06P; SPP80P06PXK; SPP80P06PBKSA1;
Introduction Date: February 01, 1990
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP53P06-20-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP53P06-20-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP53P06-20-GE3
MOSFET P-CH 60V 9.2A/53A TO220AB

MOSFET P-CH 60V 9.2A/53A TO220AB

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SUP53P06-20-GE3-ND 278-SUP53P06-20-GE3 716463-SUP53P06-20-GE3 SUP53P06-20-GE3
Product Name Single FETs, MOSFETs 60V 9.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
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