Manufacturer: Vishay
Win Source Part Number: 1104128-SUP53P06-20-
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.2A (Ta), 53A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
P-CH MOSFET 60V 53A 19.5mR TO-220AB Product overview: SUP53P06-20-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 53A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 53A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP53P06-20-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 9.2A/53A TO220AB
MOSFET P-CH 60V 9.2A TO220AB
MOSFET 60V 53A 104.2W 19.5mohm @ 10V
MOSFET Transistor, P Channel, 53 A, -60 V, 19.5 mohm, -10 V, -1 V RoHS Compliant: Yes
MOSFET P-CH 60V 9.2A/53A TO220AB
MOSFET TRANSISTOR, P CHANNEL, 53 A, -60 V, 19.5 MOHM, -10 V, -1 V ROHS COMPLIANT: YES, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 1104128-SUP53P06-20-E3 | SUP53P06-20-E3-ND | 278-SUP53P06-20-E3 | SUP53P06-20-E3 | 880-SUP53P06-20-E3 | SUP53P06-20-E3 | 40P0836 | SUP53P06-20-E3 | 39148942 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-E3 | Single FETs, MOSFETs | 60V 53A MOSFET Transistor | Single FETs, MOSFETs | MOSFET P-CH 60V 9.2A TO220AB | MOSFET | Mosfet Transistor, P Channel, 53 A, -60 V, 19.5 Mohm, -10 V, -1 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | -60 volts | ||||||
| PD | 3100 to 104200 milliwatts | 3100 milliwatts | 3100 milliwatts | 3100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 |
