Vishay Precision Group Single FETs, MOSFETs SUP53P06-20-E3

Description
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUP53P06-20-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP53P06-20-E3-ND
Single FETs, MOSFETs SUP53P06-20-E3-ND
P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-E3 - 1104128-SUP53P06-20-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-E3
1104128-SUP53P06-20-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-E3 1104128-SUP53P06-20-E3
Manufacturer: Vishay Win Source Part Number: 1104128-SUP53P06-20- E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.2A (Ta), 53A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 115nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104128-SUP53P06-20-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.2A (Ta), 53A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SUP53P06-20-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUP53P06-20-E3
Single FETs, MOSFETs SUP53P06-20-E3
MOSFET P-CH 60V 9.2A/53A TO220AB

MOSFET P-CH 60V 9.2A/53A TO220AB

Supplier's Site Datasheet
Singapore
60V 53A MOSFET Transistor
278-SUP53P06-20-E3
60V 53A MOSFET Transistor 278-SUP53P06-20-E3
P-CH MOSFET 60V 53A 19.5mR TO-220AB Product overview: SUP53P06-20-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 53A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 53A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP53P06-20-E3 can be used for catalog matching and distributor lookup.

P-CH MOSFET 60V 53A 19.5mR TO-220AB Product overview: SUP53P06-20-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 53A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 53A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP53P06-20-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 39148942 - Radwell International
Willingboro, NJ, United States
Transistor
39148942
Transistor 39148942
MOSFET TRANSISTOR, P CHANNEL, 53 A, -60 V, 19.5 MOHM, -10 V, -1 V ROHS COMPLIANT: YES, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, P CHANNEL, 53 A, -60 V, 19.5 MOHM, -10 V, -1 V ROHS COMPLIANT: YES, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP53P06-20-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP53P06-20-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP53P06-20-E3
MOSFET P-CH 60V 9.2A/53A TO220AB

MOSFET P-CH 60V 9.2A/53A TO220AB

Supplier's Site
Mosfet Transistor, P Channel, 53 A, -60 V, 19.5 Mohm, -10 V, -1 V Rohs Compliant Vishay - 40P0836 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 53 A, -60 V, 19.5 Mohm, -10 V, -1 V Rohs Compliant Vishay
40P0836
Mosfet Transistor, P Channel, 53 A, -60 V, 19.5 Mohm, -10 V, -1 V Rohs Compliant Vishay 40P0836
MOSFET Transistor, P Channel, 53 A, -60 V, 19.5 mohm, -10 V, -1 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 53 A, -60 V, 19.5 mohm, -10 V, -1 V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET P-CH 60V 9.2A TO220AB - 880-SUP53P06-20-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 60V 9.2A TO220AB
880-SUP53P06-20-E3
MOSFET P-CH 60V 9.2A TO220AB 880-SUP53P06-20-E3
MOSFET P-CH 60V 9.2A TO220AB

MOSFET P-CH 60V 9.2A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 53A 104.2W 19.5mohm @ 10V

MOSFET 60V 53A 104.2W 19.5mohm @ 10V

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUP53P06-20-E3-ND 1104128-SUP53P06-20-E3 SUP53P06-20-E3 278-SUP53P06-20-E3 39148942 SUP53P06-20-E3 40P0836 880-SUP53P06-20-E3 SUP53P06-20-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP53P06-20-E3 Single FETs, MOSFETs 60V 53A MOSFET Transistor Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, 53 A, -60 V, 19.5 Mohm, -10 V, -1 V Rohs Compliant Vishay MOSFET P-CH 60V 9.2A TO220AB MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-3
V(BR)DSS 60 volts 60 volts -60 volts
PD 3100 to 104200 milliwatts 3100 milliwatts 3100 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SC2612 - 906350-2SC2612 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFL024NTR - 199526-AUIRFL024NTR - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts
PD 1000 milliwatts
View Details
7 suppliers