Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SUP50020EL-GE3

Description
Win Source Part Number: 1199319-SUP50020EL-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Bulk Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11113 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP50020 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1199319-SUP50020EL-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SUP50020EL-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP50020EL-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1199319-SUP50020EL-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Bulk Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11113 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP50020 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1199319-SUP50020EL-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1199319-SUP50020EL-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1199319-SUP50020EL-GE3
Win Source Part Number: 1199319-SUP50020EL-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Bulk Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11113 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP50020 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1199319-SUP50020EL-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Bulk
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11113 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP50020
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUP50020EL-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP50020EL-GE3-ND
Single FETs, MOSFETs SUP50020EL-GE3-ND
N-Channel 60V 120A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 60V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP50020EL-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP50020EL-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP50020EL-GE3
MOSFET N-CH 60V 120A TO220AB

MOSFET N-CH 60V 120A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SUP50020EL-GE3
MOSFET SUP50020EL-GE3
MOSFET 60V Vds 20V Vgs TO-220

MOSFET 60V Vds 20V Vgs TO-220

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1199319-SUP50020EL-GE3 SUP50020EL-GE3-ND SUP50020EL-GE3 SUP50020EL-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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