Vishay Precision Group Single FETs, MOSFETs SUP50010E-GE3

Description
N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUP50010E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP50010E-GE3-ND
Single FETs, MOSFETs SUP50010E-GE3-ND
N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277490-SUP50010E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277490-SUP50010E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277490-SUP50010E-GE3
Win Source Part Number: 1277490-SUP50010E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUP50010 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277490-SUP50010E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUP50010
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUP50010E-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUP50010E-GE3
Single FETs, MOSFETs SUP50010E-GE3
MOSFET N-CH 60V 150A TO220AB

MOSFET N-CH 60V 150A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP50010E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP50010E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP50010E-GE3
MOSFET N-CH 60V 150A TO220AB

MOSFET N-CH 60V 150A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V Vds; 20V Vgs TO-220AB

MOSFET 60V Vds; 20V Vgs TO-220AB

Buy Now Datasheet
Mosfet, 60V, 150A, 175Deg C, 375W; Transistor Polarity Vishay - 54AH9659 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 60V, 150A, 175Deg C, 375W; Transistor Polarity Vishay
54AH9659
Mosfet, 60V, 150A, 175Deg C, 375W; Transistor Polarity Vishay 54AH9659
MOSFET, 60V, 150A, 175DEG C, 375W; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00166ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, 60V, 150A, 175DEG C, 375W; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00166ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUP50010E-GE3-ND 1277490-SUP50010E-GE3 SUP50010E-GE3 SUP50010E-GE3 SUP50010E-GE3 54AH9659
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, 60V, 150A, 175Deg C, 375W; Transistor Polarity Vishay
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 150000 milliamps 150000 milliamps
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