Vishay Intertechnology, Inc. FETs - Single - SUP40P10-43-GE3 SUP40P10-43-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 814060-SUP40P10-43-G E3 Packaging: Reel Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100V Part Status: Obsolete (End Of Life) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 2W , 125W (Tc) Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 43mOhm at 10A, 10V Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4600pF at 50V Current - Continuous Drain (Id) at 25°C: 36A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 814060-SUP40P10-43-G E3 Packaging: Reel Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100V Part Status: Obsolete (End Of Life) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 2W , 125W (Tc) Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 43mOhm at 10A, 10V Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4600pF at 50V Current - Continuous Drain (Id) at 25°C: 36A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V
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Suppliers

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FETs - Single - SUP40P10-43-GE3 - 814060-SUP40P10-43-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SUP40P10-43-GE3
814060-SUP40P10-43-GE3
FETs - Single - SUP40P10-43-GE3 814060-SUP40P10-43-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 814060-SUP40P10-43-G E3 Packaging: Reel Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100V Part Status: Obsolete (End Of Life) Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 2W , 125W (Tc) Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 43mOhm at 10A, 10V Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 4600pF at 50V Current - Continuous Drain (Id) at 25°C: 36A (Tc) Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 814060-SUP40P10-43-GE3
Packaging: Reel
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 100V
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 2W , 125W (Tc)
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 43mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4600pF at 50V
Current - Continuous Drain (Id) at 25°C: 36A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - SUP40P10-43-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP40P10-43-GE3-ND
Single FETs, MOSFETs SUP40P10-43-GE3-ND
P-Channel 100V 36A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220AB

P-Channel 100V 36A (Tc) 2W (Ta), 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP40P10-43-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP40P10-43-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP40P10-43-GE3
MOSFET P-CH 100V 36A TO220AB

MOSFET P-CH 100V 36A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 814060-SUP40P10-43-GE3 SUP40P10-43-GE3-ND SUP40P10-43-GE3
Product Name FETs - Single - SUP40P10-43-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
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