Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 SUP40N25-60-E3

Description
Manufacturer: Vishay Win Source Part Number: 1104126-SUP40N25-60- E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 - 1104126-SUP40N25-60-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SUP40N25-60-E3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP40N25-60-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1104126-SUP40N25-60- E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 - 1104126-SUP40N25-60-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3
1104126-SUP40N25-60-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 1104126-SUP40N25-60-E3
Manufacturer: Vishay Win Source Part Number: 1104126-SUP40N25-60- E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104126-SUP40N25-60-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SUP40N25-60-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP40N25-60-E3-ND
Single FETs, MOSFETs SUP40N25-60-E3-ND
N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V
70026024
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V 70026024
PCB Mounting and TO-220AB Package Dual N-Channel 250 V Voltage (D-S) Power MOSFET TrenchFET power MOSFET 175 °C junction temperature New low thermal resistance package Resistance drain to source on 0.049 Ohms. Power dissipation is 300 W.

PCB Mounting and TO-220AB Package Dual N-Channel 250 V Voltage (D-S) Power MOSFET

  • TrenchFET power MOSFET
  • 175 °C junction temperature
  • New low thermal resistance package
    Resistance drain to source on 0.049 Ohms. Power dissipation is 300 W.
Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP40N25-60-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP40N25-60-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP40N25-60-E3
MOSFET N-CH 250V 40A TO220AB

MOSFET N-CH 250V 40A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SUP40N25-60-E3
MOSFET SUP40N25-60-E3
MOSFET 250V 40A 300W 60mohm @ 10V

MOSFET 250V 40A 300W 60mohm @ 10V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1104126-SUP40N25-60-E3 SUP40N25-60-E3-ND 70026024 SUP40N25-60-E3 SUP40N25-60-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
PD 3750 to 300000 milliwatts 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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