Vishay Intertechnology, Inc. Single FETs, MOSFETs SUP40N25-60-E3

Description
N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUP40N25-60-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP40N25-60-E3-ND
Single FETs, MOSFETs SUP40N25-60-E3-ND
N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 - 1104126-SUP40N25-60-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3
1104126-SUP40N25-60-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 1104126-SUP40N25-60-E3
Manufacturer: Vishay Win Source Part Number: 1104126-SUP40N25-60- E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104126-SUP40N25-60-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 250V 40A 300W 60mohm @ 10V

MOSFET 250V 40A 300W 60mohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP40N25-60-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP40N25-60-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP40N25-60-E3
MOSFET N-CH 250V 40A TO220AB

MOSFET N-CH 250V 40A TO220AB

Supplier's Site
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V
70026024
MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V 70026024
PCB Mounting and TO-220AB Package Dual N-Channel 250 V Voltage (D-S) Power MOSFET TrenchFET power MOSFET 175 °C junction temperature New low thermal resistance package Resistance drain to source on 0.049 Ohms. Power dissipation is 300 W.

PCB Mounting and TO-220AB Package Dual N-Channel 250 V Voltage (D-S) Power MOSFET

  • TrenchFET power MOSFET
  • 175 °C junction temperature
  • New low thermal resistance package
    Resistance drain to source on 0.049 Ohms. Power dissipation is 300 W.
Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUP40N25-60-E3-ND 1104126-SUP40N25-60-E3 SUP40N25-60-E3 SUP40N25-60-E3 70026024
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220
V(BR)DSS 250 volts 250 volts
PD 3750 to 300000 milliwatts 300000 milliwatts
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