Manufacturer: Vishay
Win Source Part Number: 1104126-SUP40N25-60-
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 5000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
PCB Mounting and TO-220AB Package Dual N-Channel 250 V Voltage (D-S) Power MOSFET
MOSFET N-CH 250V 40A TO220AB
MOSFET 250V 40A 300W 60mohm @ 10V
| Win Source Electronics | DigiKey | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1104126-SUP40N25-60-E3 | SUP40N25-60-E3-ND | 70026024 | SUP40N25-60-E3 | SUP40N25-60-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP40N25-60-E3 | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 250V;RDS(ON) 0.049Ohm;ID 40A;TO-220AB;PD 300W;VGS +/-30V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | 250 volts | |||
| PD | 3750 to 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) |