Vishay Intertechnology, Inc. Single FETs, MOSFETs SUP40010EL-GE3

Description
N-Channel 40V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 40V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUP40010EL-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUP40010EL-GE3-ND
Single FETs, MOSFETs SUP40010EL-GE3-ND
N-Channel 40V 120A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 40V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
FETs - Single - SUP40010EL-GE3 - 812391-SUP40010EL-GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SUP40010EL-GE3
812391-SUP40010EL-GE3
FETs - Single - SUP40010EL-GE3 812391-SUP40010EL-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 812391-SUP40010EL-GE 3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 375W (Tc) Popularity: Low Fake Threat In the Open Market: 81 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.8mOhm at 30A, 10V Gate Charge (Qg) (Maximum) at Vgs: 230nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 11155pF at 30V Current - Continuous Drain (Id) at 25°C: 120A (Tc) Vgs(th) (Maximum) at Id: 2.5V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 812391-SUP40010EL-GE3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Low
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.8mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 230nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 11155pF at 30V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V

Buy Now
Sheung Wan, Hong Kong
MOSFET 40V Vds 20V Vgs TO-220

MOSFET 40V Vds 20V Vgs TO-220

Buy Now Datasheet
Mosfet, N-Ch, 40V, 120A, To-220Ab Rohs Compliant Vishay - 26AK5835 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 120A, To-220Ab Rohs Compliant Vishay
26AK5835
Mosfet, N-Ch, 40V, 120A, To-220Ab Rohs Compliant Vishay 26AK5835
MOSFET, N-CH, 40V, 120A, TO-220AB ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 120A, TO-220AB ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUP40010EL-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUP40010EL-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUP40010EL-GE3
MOSFET N-CH 40V 120A TO220AB

MOSFET N-CH 40V 120A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SUP40010EL-GE3-ND 812391-SUP40010EL-GE3 SUP40010EL-GE3 26AK5835 SUP40010EL-GE3
Product Name Single FETs, MOSFETs FETs - Single - SUP40010EL-GE3 MOSFET Mosfet, N-Ch, 40V, 120A, To-220Ab Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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