Vishay Intertechnology, Inc. Single FETs, MOSFETs SUP40010EL-GE3

N-Channel 40V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SUP40010EL-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 40V, 0.0018ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 40V, 0.0018ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUP40010EL-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 812391-SUP40010EL-GE3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 375W (Tc)
Popularity: Low
Fake Threat In the Open Market: 81 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.8mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 230nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 11155pF at 30V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V