Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP33N20-60P-E3 SUP33N20-60P-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965583-SUP33N20-60P- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 200 V Number of Elements: 1 Power Dissipation: 3.12 W Number of Pins: 3 Rise Time: 170 ns Fall Time: 9 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 3.12 W Turn-On Delay Time: 16 ns Continuous Drain Current (ID): 33 A Drain to Source Breakdown Voltage: 200 V Turn-Off Delay Time: 26 ns Drain to Source Resistance: 60 mΩ Gate to Source Voltage (Vgs): 25 V Threshold Voltage: 4.5 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965583-SUP33N20-60P- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 200 V Number of Elements: 1 Power Dissipation: 3.12 W Number of Pins: 3 Rise Time: 170 ns Fall Time: 9 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 3.12 W Turn-On Delay Time: 16 ns Continuous Drain Current (ID): 33 A Drain to Source Breakdown Voltage: 200 V Turn-Off Delay Time: 26 ns Drain to Source Resistance: 60 mΩ Gate to Source Voltage (Vgs): 25 V Threshold Voltage: 4.5 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP33N20-60P-E3 - 965583-SUP33N20-60P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP33N20-60P-E3
965583-SUP33N20-60P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP33N20-60P-E3 965583-SUP33N20-60P-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 965583-SUP33N20-60P- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 200 V Number of Elements: 1 Power Dissipation: 3.12 W Number of Pins: 3 Rise Time: 170 ns Fall Time: 9 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Popularity: Low Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C REACH SVHC: No SVHC Element Configuration: Single Max Power Dissipation: 3.12 W Turn-On Delay Time: 16 ns Continuous Drain Current (ID): 33 A Drain to Source Breakdown Voltage: 200 V Turn-Off Delay Time: 26 ns Drain to Source Resistance: 60 mΩ Gate to Source Voltage (Vgs): 25 V Threshold Voltage: 4.5 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 965583-SUP33N20-60P-E3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 200 V
Number of Elements: 1
Power Dissipation: 3.12 W
Number of Pins: 3
Rise Time: 170 ns
Fall Time: 9 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220-3
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Element Configuration: Single
Max Power Dissipation: 3.12 W
Turn-On Delay Time: 16 ns
Continuous Drain Current (ID): 33 A
Drain to Source Breakdown Voltage: 200 V
Turn-Off Delay Time: 26 ns
Drain to Source Resistance: 60 mΩ
Gate to Source Voltage (Vgs): 25 V
Threshold Voltage: 4.5 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 965583-SUP33N20-60P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP33N20-60P-E3
Package Type TO-220; SOT3; TO-220-3
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA - 855027-2SA1319S-AA - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
55V 31A DPAK MOSFET Transistor - 278-AUIRFR5305TRL - ERSAELECTRONICS PTE. LTD.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 55 volts
View Details
8 suppliers