Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N10-8M2P-E3 SUM90N10-8M2P-E3

Description
Manufacturer: Vishay Win Source Part Number: 138792-SUM90N10-8M2P -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Family Name: SUM90N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 6290pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): BUK768R1-100E; BUK768R1-100E,118; AUIRFS4410ZTRR; IPB08CN10N G; Introduction Date: September 18, 2007 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 138792-SUM90N10-8M2P -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Family Name: SUM90N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 6290pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): BUK768R1-100E; BUK768R1-100E,118; AUIRFS4410ZTRR; IPB08CN10N G; Introduction Date: September 18, 2007 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N10-8M2P-E3 - 138792-SUM90N10-8M2P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N10-8M2P-E3
138792-SUM90N10-8M2P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N10-8M2P-E3 138792-SUM90N10-8M2P-E3
Manufacturer: Vishay Win Source Part Number: 138792-SUM90N10-8M2P -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Family Name: SUM90N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 6290pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): BUK768R1-100E; BUK768R1-100E,118; AUIRFS4410ZTRR; IPB08CN10N G; Introduction Date: September 18, 2007 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 138792-SUM90N10-8M2P-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Family Name: SUM90N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 6290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): BUK768R1-100E; BUK768R1-100E,118; AUIRFS4410ZTRR; IPB08CN10N G;
Introduction Date: September 18, 2007
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SUM90N10-8M2P-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM90N10-8M2P-E3DKR-ND
Single FETs, MOSFETs SUM90N10-8M2P-E3DKR-ND
N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM90N10-8M2P-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM90N10-8M2P-E3TR-ND
Single FETs, MOSFETs SUM90N10-8M2P-E3TR-ND
N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM90N10-8M2P-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM90N10-8M2P-E3CT-ND
Single FETs, MOSFETs SUM90N10-8M2P-E3CT-ND
N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM90N10-8M2P-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUM90N10-8M2P-E3
Single FETs, MOSFETs SUM90N10-8M2P-E3
MOSFET N-CH 100V 90A TO263

MOSFET N-CH 100V 90A TO263

Supplier's Site Datasheet
Transistor - 39148934 - Radwell International
Willingboro, NJ, United States
Transistor
39148934
Transistor 39148934
(PRICE/TC) MOSFET, N CHANNEL, 100V, 90A, TO-263-3; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:90A; ON RESISTANCE RDS(ON):0.0067OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, N CHANNEL, 100V, 90A, TO-263-3; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:90A; ON RESISTANCE RDS(ON):0.0067OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, N Channel, 100V, 90A, To-263; Channel Type Vishay - 55R1943 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 90A, To-263; Channel Type Vishay
55R1943
Mosfet, N Channel, 100V, 90A, To-263; Channel Type Vishay 55R1943
MOSFET, N CHANNEL, 100V, 90A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 90A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM90N10-8M2P-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM90N10-8M2P-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM90N10-8M2P-E3
MOSFET N-CH 100V 90A TO263

MOSFET N-CH 100V 90A TO263

Supplier's Site
MOSFET 100V 90A 300W

MOSFET 100V 90A 300W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 138792-SUM90N10-8M2P-E3 SUM90N10-8M2P-E3DKR-ND SUM90N10-8M2P-E3 39148934 55R1943 SUM90N10-8M2P-E3 SUM90N10-8M2P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N10-8M2P-E3 Single FETs, MOSFETs Single FETs, MOSFETs Transistor Mosfet, N Channel, 100V, 90A, To-263; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3750 to 300000 milliwatts 3750 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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