(PRICE/TC) MOSFET, N CHANNEL, 100V, 90A, TO-263-3; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:90A; ON RESISTANCE RDS(ON):0.0067OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY
N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET N-CH 100V 90A TO263
Manufacturer: Vishay
Win Source Part Number: 138792-SUM90N10-8M2P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Family Name: SUM90N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 6290pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): BUK768R1-100E; BUK768R1-100E,118; AUIRFS4410ZTRR; IPB08CN10N G;
Introduction Date: September 18, 2007
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 90A TO263
MOSFET, N CHANNEL, 100V, 90A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
| Radwell International | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 39148934 | SUM90N10-8M2P-E3DKR-ND | SUM90N10-8M2P-E3 | 138792-SUM90N10-8M2P-E3 | SUM90N10-8M2P-E3 | SUM90N10-8M2P-E3 | 55R1943 |
| Product Name | Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N10-8M2P-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 100V, 90A, To-263; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; TO-263 (D2Pak) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts |
