Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N06-4M4P-E3 SUM90N06-4M4P-E3

Description
Manufacturer: Vishay Win Source Part Number: 108125-SUM90N06-4M4P -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Family Name: SUM90N06-4M4P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6190pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IPB049N06L3GXT; FS70VSJ-06F-T11; IPB049N06L3GATMA1; IPB049N06L3GZT; Introduction Date: September 18, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 108125-SUM90N06-4M4P -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Family Name: SUM90N06-4M4P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6190pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IPB049N06L3GXT; FS70VSJ-06F-T11; IPB049N06L3GATMA1; IPB049N06L3GZT; Introduction Date: September 18, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N06-4M4P-E3 - 108125-SUM90N06-4M4P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N06-4M4P-E3
108125-SUM90N06-4M4P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N06-4M4P-E3 108125-SUM90N06-4M4P-E3
Manufacturer: Vishay Win Source Part Number: 108125-SUM90N06-4M4P -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Family Name: SUM90N06-4M4P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6190pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IPB049N06L3GXT; FS70VSJ-06F-T11; IPB049N06L3GATMA1; IPB049N06L3GZT; Introduction Date: September 18, 2007 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 108125-SUM90N06-4M4P-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Family Name: SUM90N06-4M4P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6190pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IPB049N06L3GXT; FS70VSJ-06F-T11; IPB049N06L3GATMA1; IPB049N06L3GZT;
Introduction Date: September 18, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM90N06-4M4P-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM90N06-4M4P-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM90N06-4M4P-E3
MOSFET N-CH 60V 90A TO263

MOSFET N-CH 60V 90A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 108125-SUM90N06-4M4P-E3 SUM90N06-4M4P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N06-4M4P-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 3750 to 300000 milliwatts
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