Manufacturer: Vishay
Win Source Part Number: 108125-SUM90N06-4M4P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Family Name: SUM90N06-4M4P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6190pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IPB049N06L3GXT; FS70VSJ-06F-T11; IPB049N06L3GATMA1; IPB049N06L3GZT;
Introduction Date: September 18, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 90A TO263
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 108125-SUM90N06-4M4P-E3 | SUM90N06-4M4P-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM90N06-4M4P-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 60 volts | |
| PD | 3750 to 300000 milliwatts |