N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)
Win Source Part Number: 1277693-SUM90330E-GE
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM90330E-GE3TR,SUM9
Base Product Number: SUM90330
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
POWER, FET, Product overview: SUM90330E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90330E-GE3 can be used for catalog matching and distributor lookup.
MOSFET 200V Vds 20V Vgs TO-263
MOSFET N-CH 200V 35.1A TO263
MOSFET N-CH 200V 35.1A TO263
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUM90330E-GE3DKR-ND | 1277693-SUM90330E-GE3 | 278-SUM90330E-GE3 | SUM90330E-GE3 | SUM90330E-GE3 | SUM90330E-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
