Vishay Intertechnology, Inc. MOSFET Transistor SUM90330E-GE3

Description
POWER, FET, Product overview: SUM90330E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90330E-GE3 can be used for catalog matching and distributor lookup.
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Description
POWER, FET, Product overview: SUM90330E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90330E-GE3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

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Supplier Links
MOSFET Transistor 278-SUM90330E-GE3
POWER, FET, Product overview: SUM90330E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90330E-GE3 can be used for catalog matching and distributor lookup.

POWER, FET, Product overview: SUM90330E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90330E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SUM90330E-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUM90330E-GE3
Single FETs, MOSFETs SUM90330E-GE3
MOSFET N-CH 200V 35.1A TO263

MOSFET N-CH 200V 35.1A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277693-SUM90330E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277693-SUM90330E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277693-SUM90330E-GE3
Win Source Part Number: 1277693-SUM90330E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUM90330E-GE3TR,SUM9 0330E-GE3CT,SUM90330 E-GE3DKR Base Product Number: SUM90330 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277693-SUM90330E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM90330E-GE3TR,SUM90330E-GE3CT,SUM90330E-GE3DKR
Base Product Number: SUM90330
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUM90330E-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM90330E-GE3DKR-ND
Single FETs, MOSFETs SUM90330E-GE3DKR-ND
N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM90330E-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM90330E-GE3CT-ND
Single FETs, MOSFETs SUM90330E-GE3CT-ND
N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM90330E-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM90330E-GE3TR-ND
Single FETs, MOSFETs SUM90330E-GE3TR-ND
N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 200V Vds 20V Vgs TO-263

MOSFET 200V Vds 20V Vgs TO-263

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM90330E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM90330E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM90330E-GE3
MOSFET N-CH 200V 35.1A TO263

MOSFET N-CH 200V 35.1A TO263

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SUM90330E-GE3 SUM90330E-GE3 1277693-SUM90330E-GE3 SUM90330E-GE3DKR-ND SUM90330E-GE3 SUM90330E-GE3
Product Name MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
IDSS 35100 milliamps
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