The Vishay N-Channel MOSFET, part number 15AC8718, is rated for a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 64A. It features a low on-resistance (R_DS(on)) of 0.0216Oc at a gate-source voltage (V_GS) of 10V, making it suitable for applications requiring efficient power management. The device has a maximum junction temperature of 175¬8C and is designed for high-performance applications such as synchronous rectification, power supplies, and motor drive switches. The TO-263 package ensures effective thermal management with a maximum power dissipation of 230W at 25¬8C. This MOSFET is also lead-free and halogen-free, complying with environmental standards.
MOSFET N-CH 200V 64A D2PAK
MOSFET N-Ch 200V 64A 175C TO-263 D2PAK
MOSFET N-Ch 200V 64A 175C TO-263 D2PAK
Win Source Part Number: 1019219-SUM90220E-GE
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tape & Reel (TR),Cut Tape (CT)
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM90220E-GE3TR,SUM9
Base Product Number: SUM90220
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 200V 64A (Tc) 230W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 64A (Tc) 230W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET, N-CH, 200V, 64A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET 200V Vds 20V Vgs TO-263
MOSFET N-CH 200V 64A D2PAK
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SUM90220E-GE3 | 1349703 | 1349703P | 1019219-SUM90220E-GE3 | SUM90220E-GE3CT-ND | 15AC8718 | SUM90220E-GE3 | SUM90220E-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 64A, To-263; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | |||||||
| IDSS | 64000 milliamps | 64000 milliamps | ||||||
| PD | 230000 milliwatts | 230000 milliwatts |
