MOSFET N-CH 200V 90A D2PAK
N-Ch MOSFET D2PAK 200V 17mohm @ 10V
N-Ch MOSFET D2PAK 200V 17mohm @ 10V
N-Ch MOSFET D2PAK 200V 17mohm @ 10V
Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2 Product overview: SUM90140E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 90A, 200V, 0.018ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90A, 200V, 0.018ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90140E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 200V 90A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 90A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 90A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay Siliconix
Win Source Part Number: 801666-SUM90140E-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 375W (Tc)
Popularity: High
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 17mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 96nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 4132pF at 100V
Current - Continuous Drain (Id) at 25°C: 90A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 200V 90A D2PAK
MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
MOSFET, N-CH, 200V, 90A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUM90140E-GE3 | 1807420 | 278-SUM90140E-GE3 | SUM90140E-GE3CT-ND | 801666-SUM90140E-GE3 | SUM90140E-GE3 | SUM90140E-GE3 | 86Y1093 |
| Product Name | Single FETs, MOSFETs | MOSFETs | N-Channel 90A 200V 0.018ohm MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - SUM90140E-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 90A, 175Deg C, 375W; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 200 volts | |||||||
| IDSS | 90000 milliamps | 90000 milliamps |
