The SUM80090E-GE3 is an N-Channel MOSFET with a maximum drain-source voltage (V_DS) of 150 V and a continuous drain current (I_D) rating of 128 A at a case temperature of 25 ¬8C. It features a low on-state resistance (R_DS(on)) of 9 mOc at a gate-source voltage (V_GS) of 10 V and 10.5 mOc at 7.5 V, making it suitable for high-efficiency applications. The device is designed to operate within a temperature range of -55 ¬8C to +175 ¬8C and has a maximum power dissipation of 375 W. This MOSFET is suitable for various applications, including power supplies, synchronous rectification, DC/DC converters, motor drives, and solar micro inverters. It is packaged in a TO-263 (D2PAK) format, which is compatible with surface mount technology. The part is lead-free and halogen-free, aligning with modern environmental standards. The SUM80090E-GE3 is tested for gate resistance and avalanche characteristics, ensuring reliability in demanding conditions.
Manufacturer: Vishay Siliconix
Win Source Part Number: 712373-SUM80090E-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 375W
Alternative Parts (Cross-Reference): AUIRFS4115; FDB110N15A; STH90N15F4-2;
Popularity: Low
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 128A
Rds On (Maximum) at Id, Vgs: 9mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 95nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3425pF at 75V
Power Field-Effect Transistor, 128A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2 Product overview: SUM80090E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 128A, 150V, 0.0105ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 128A, 150V, 0.0105ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM80090E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 150V 128A D2PAK
MOSFET N-CH 150V 128A D2PAK
MOSFET 150V Vds 20V Vgs D2PAK (TO-263)
MOSFET, N-CH, 150V, 128A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:128A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 712373-SUM80090E-GE3 | 278-SUM80090E-GE3 | SUM80090E-GE3CT-ND | SUM80090E-GE3 | SUM80090E-GE3 | SUM80090E-GE3 | 86Y1092 |
| Product Name | FETs - Single - SUM80090E-GE3 | N-Channel 128A 150V 0.0105ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 150V, 128A, 175Deg C, 375W; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 375000 milliwatts | 375000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
