Vishay Intertechnology, Inc. Single FETs, MOSFETs SUM75N06-09L-E3

Description
MOSFET N-CH 60V 90A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 60V 90A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUM75N06-09L-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUM75N06-09L-E3
Single FETs, MOSFETs SUM75N06-09L-E3
MOSFET N-CH 60V 90A D2PAK

MOSFET N-CH 60V 90A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM75N06-09L-E3 - 1104120-SUM75N06-09L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM75N06-09L-E3
1104120-SUM75N06-09L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM75N06-09L-E3 1104120-SUM75N06-09L-E3
Manufacturer: Vishay Win Source Part Number: 1104120-SUM75N06-09L -E3 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.3 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1104120-SUM75N06-09L-E3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM75N06-09L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM75N06-09L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM75N06-09L-E3
MOSFET N-CH 60V 90A D2PAK

MOSFET N-CH 60V 90A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SUM75N06-09L-E3 1104120-SUM75N06-09L-E3 SUM75N06-09L-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM75N06-09L-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 90000 milliamps
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