MOSFET P-CH 60V 55A TO263
P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D²Pak)
Manufacturer: Vishay
Win Source Part Number: 057012-SUM55P06-19L-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): STB80PF55; 2SJ606-ZJ; 2SJ606-ZJ-AZ;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
P CHANNEL MOSFET, -60V, 5.5A TO-263; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P-CH, 60V, 55A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-55A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:125W; Operating RoHS Compliant: Yes
MOSFET, P CHANNEL, -60V, 0.015OHM, -55A, TO-263, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:55A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes
MOSFET P-CH 60V 55A TO263
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUM55P06-19L-E3 | SUM55P06-19L-E3DKR-ND | 057012-SUM55P06-19L-E3 | 57J5879 | 55R1942 | 73W9425 | SUM55P06-19L-E3 | SUM55P06-19L-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM55P06-19L-E3 | P Channel Mosfet, -60V, 5.5A To-263; Channel Type Vishay | Mosfet, P-Ch, 60V, 55A, To-263; Transistor Polarity Vishay | Mosfet, P Channel, -60V, 0.015Ohm, -55A, To-263, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 55000 milliamps | 5500 milliamps | -55000 milliamps | 55000 milliamps | ||||
| PD | 3750 milliwatts | 3750 to 125000 milliwatts | 125000 milliwatts | 125000 milliwatts |
