Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2 Product overview: SUM50020EL-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 60V, 0.0021ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 60V, 0.0021ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM50020EL-GE3 can be used for catalog matching and distributor lookup.
N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Win Source Part Number: 1277608-SUM50020EL-G
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11113 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM50020EL-GE3TR,SUM
Base Product Number: SUM50020
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, N-CH, 60V, 120A, TO-263 ROHS COMPLIANT: YES
MOSFET 60V Vds 20V Vgs D2PAK (TO-263)
MOSFET N-CH 60V 120A TO263
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SUM50020EL-GE3 | SUM50020EL-GE3DKR-ND | 1277608-SUM50020EL-GE3 | 57AJ0781 | SUM50020EL-GE3 | SUM50020EL-GE3 |
| Product Name | N-Channel 120A 60V 0.0021ohm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
