Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM40N10-30-E3 SUM40N10-30-E3

Description
Manufacturer: Vishay Win Source Part Number: 1104118-SUM40N10-30- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM40N10-30-E3 - 1104118-SUM40N10-30-E3 - Win Source Electronics
    Win Source Electronics
  • Transistor - 22266315 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM40N10-30-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1104118-SUM40N10-30- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM40N10-30-E3 - 1104118-SUM40N10-30-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM40N10-30-E3
1104118-SUM40N10-30-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM40N10-30-E3 1104118-SUM40N10-30-E3
Manufacturer: Vishay Win Source Part Number: 1104118-SUM40N10-30- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1104118-SUM40N10-30-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 22266315 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
22266315
Transistor 22266315
DISCONTINUED BY MANUFACTURER, N CHANNEL MOSFET, 100V, 40A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:40A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, N CHANNEL MOSFET, 100V, 40A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:40A; DRAIN SOURCE VOLTAGE VDS:100V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM40N10-30-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM40N10-30-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM40N10-30-E3
MOSFET N-CH 100V 40A TO263

MOSFET N-CH 100V 40A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1104118-SUM40N10-30-E3 22266315 SUM40N10-30-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM40N10-30-E3 Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 3750 to 107000 milliwatts
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