P-Channel MOSFET, 60V, 110A, 8mR, TO-263, Surface Mount Product overview: SUM110P06-08L-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 60V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM110P06-08L-E3
MOSFET P-CH 60V 110A TO263
P-Channel 60V 110A (Tc) 3.75W (Ta), 272W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 60V 110A (Tc) 3.75W (Ta), 272W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 60V 110A (Tc) 3.75W (Ta), 272W (Tc) Surface Mount TO-263 (D²Pak)
Manufacturer: Vishay
Win Source Part Number: 140464-SUM110P06-08L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 9200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 110A TO263
MOSFET, P-CH, -60V, -110A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET, P CHANNEL, -60V, -110A, TO-263-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:272W RoHS Compliant: Yes
MOSFET 60V 110A 272W 8.0mohm @ 10V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SUM110P06-08L-E3 | SUM110P06-08L-E3 | SUM110P06-08L-E3CT-ND | 140464-SUM110P06-08L-E3 | SUM110P06-08L-E3 | 70AC6529 | 57J5875 | SUM110P06-08L-E3 |
| Product Name | P-Channel SMD 60V 110A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110P06-08L-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -60V, -110A, To-263; Channel Type Vishay | Mosfet, P Channel, -60V, -110A, To-263-3, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| PD | 272000 milliwatts | 3750 milliwatts | 3750 to 272000 milliwatts | 272000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
