Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 SUM110N10-09-E3

Description
Manufacturer: Vishay Win Source Part Number: 031618-SUM110N10-09- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N10-09 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST; Introduction Date: October 24, 2001 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 031618-SUM110N10-09- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N10-09 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST; Introduction Date: October 24, 2001 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 - 031618-SUM110N10-09-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3
031618-SUM110N10-09-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 031618-SUM110N10-09-E3
Manufacturer: Vishay Win Source Part Number: 031618-SUM110N10-09- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N10-09 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST; Introduction Date: October 24, 2001 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 031618-SUM110N10-09-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Family Name: SUM110N10-09
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST;
Introduction Date: October 24, 2001
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SUM110N10-09-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUM110N10-09-E3
Single FETs, MOSFETs SUM110N10-09-E3
MOSFET N-CH 100V 110A TO263

MOSFET N-CH 100V 110A TO263

Supplier's Site Datasheet
Transistor - 22266275 - Radwell International
Willingboro, NJ, United States
Transistor
22266275
Transistor 22266275
N CHANNEL MOSFET, 100V, 110A TO-263; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:110A; ON RESISTANCE RDS(ON):0.0095OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 100V, 110A TO-263; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:110A; ON RESISTANCE RDS(ON):0.0095OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - SUM110N10-09-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM110N10-09-E3DKR-ND
Single FETs, MOSFETs SUM110N10-09-E3DKR-ND
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM110N10-09-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM110N10-09-E3TR-ND
Single FETs, MOSFETs SUM110N10-09-E3TR-ND
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM110N10-09-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM110N10-09-E3CT-ND
Single FETs, MOSFETs SUM110N10-09-E3CT-ND
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM110N10-09-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM110N10-09-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM110N10-09-E3
MOSFET N-CH 100V 110A TO263

MOSFET N-CH 100V 110A TO263

Supplier's Site
N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay - 06J8505 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay
06J8505
N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay 06J8505
N CHANNEL MOSFET, 100V, 110A TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 110A TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 110A 375W

MOSFET 100V 110A 375W

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031618-SUM110N10-09-E3 SUM110N10-09-E3 22266275 SUM110N10-09-E3DKR-ND SUM110N10-09-E3 06J8505 SUM110N10-09-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 Single FETs, MOSFETs Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3750 to 375000 milliwatts 3750 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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