N-Channel MOSFET, 110A, 100V, 9.5mR, TO-263, Power Product overview: SUM110N10-09-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 110A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 110A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM110N10-09-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 110A TO263
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
Manufacturer: Vishay
Win Source Part Number: 031618-SUM110N10-09-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Family Name: SUM110N10-09
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST;
Introduction Date: October 24, 2001
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 100V, 110A TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 110A TO-263; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:110A; ON RESISTANCE RDS(ON):0.0095OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 110A TO263
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-SUM110N10-09-E3 | SUM110N10-09-E3 | SUM110N10-09-E3DKR-ND | 031618-SUM110N10-09-E3 | SUM110N10-09-E3 | 06J8505 | 22266275 | SUM110N10-09-E3 |
| Product Name | N-Channel 110A 100V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 | MOSFET | N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 437500 milliwatts | 3750 milliwatts | 3750 to 375000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
