Vishay Precision Group Single FETs, MOSFETs SUM110N10-09-E3

Description
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet
Description
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUM110N10-09-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM110N10-09-E3DKR-ND
Single FETs, MOSFETs SUM110N10-09-E3DKR-ND
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM110N10-09-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM110N10-09-E3CT-ND
Single FETs, MOSFETs SUM110N10-09-E3CT-ND
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM110N10-09-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM110N10-09-E3TR-ND
Single FETs, MOSFETs SUM110N10-09-E3TR-ND
N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 - 031618-SUM110N10-09-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3
031618-SUM110N10-09-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 031618-SUM110N10-09-E3
Manufacturer: Vishay Win Source Part Number: 031618-SUM110N10-09- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N10-09 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST; Introduction Date: October 24, 2001 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 031618-SUM110N10-09-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Family Name: SUM110N10-09
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): RJ1P12BBDTLL; HUFA75645S3S-NL; IRFS4610; HUFA75645S3ST;
Introduction Date: October 24, 2001
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 110A 100V MOSFET Transistor
278-SUM110N10-09-E3
N-Channel 110A 100V MOSFET Transistor 278-SUM110N10-09-E3
N-Channel MOSFET, 110A, 100V, 9.5mR, TO-263, Power Product overview: SUM110N10-09-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 110A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 110A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM110N10-09-E3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 110A, 100V, 9.5mR, TO-263, Power Product overview: SUM110N10-09-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 110A, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 110A, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM110N10-09-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SUM110N10-09-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUM110N10-09-E3
Single FETs, MOSFETs SUM110N10-09-E3
MOSFET N-CH 100V 110A TO263

MOSFET N-CH 100V 110A TO263

Supplier's Site Datasheet
N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay - 06J8505 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay
06J8505
N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay 06J8505
N CHANNEL MOSFET, 100V, 110A TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 110A TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Transistor - 22266275 - Radwell International
Willingboro, NJ, United States
Transistor
22266275
Transistor 22266275
N CHANNEL MOSFET, 100V, 110A TO-263; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:110A; ON RESISTANCE RDS(ON):0.0095OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 100V, 110A TO-263; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:110A; ON RESISTANCE RDS(ON):0.0095OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM110N10-09-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM110N10-09-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM110N10-09-E3
MOSFET N-CH 100V 110A TO263

MOSFET N-CH 100V 110A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 110A 375W

MOSFET 100V 110A 375W

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUM110N10-09-E3DKR-ND 031618-SUM110N10-09-E3 278-SUM110N10-09-E3 SUM110N10-09-E3 06J8505 22266275 SUM110N10-09-E3 SUM110N10-09-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N10-09-E3 N-Channel 110A 100V MOSFET Transistor Single FETs, MOSFETs N Channel Mosfet, 100V, 110A To-263; Channel Type Vishay Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (D2Pak) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts 100 volts
PD 3750 to 375000 milliwatts 437500 milliwatts 3750 milliwatts
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