Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N04-2M3L-E3 SUM110N04-2M3L-E3

Description
Manufacturer: Vishay Win Source Part Number: 136816-SUM110N04-2M3 L-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N04-2m3L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 13600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.3 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): SUM110N04-2m1P; SUM110N04-2m1P-E3; SUM40010EL-GE3; IRF2804STRR7PP; Introduction Date: August 05, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 136816-SUM110N04-2M3 L-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N04-2m3L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 13600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.3 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): SUM110N04-2m1P; SUM110N04-2m1P-E3; SUM40010EL-GE3; IRF2804STRR7PP; Introduction Date: August 05, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N04-2M3L-E3 - 136816-SUM110N04-2M3L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N04-2M3L-E3
136816-SUM110N04-2M3L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N04-2M3L-E3 136816-SUM110N04-2M3L-E3
Manufacturer: Vishay Win Source Part Number: 136816-SUM110N04-2M3 L-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Family Name: SUM110N04-2m3L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 13600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.3 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): SUM110N04-2m1P; SUM110N04-2m1P-E3; SUM40010EL-GE3; IRF2804STRR7PP; Introduction Date: August 05, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 136816-SUM110N04-2M3L-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Family Name: SUM110N04-2m3L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 13600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.3 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): SUM110N04-2m1P; SUM110N04-2m1P-E3; SUM40010EL-GE3; IRF2804STRR7PP;
Introduction Date: August 05, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM110N04-2M3L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM110N04-2M3L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM110N04-2M3L-E3
MOSFET N-CH 40V 110A TO263

MOSFET N-CH 40V 110A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 136816-SUM110N04-2M3L-E3 SUM110N04-2M3L-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110N04-2M3L-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 3750 to 375000 milliwatts
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