Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SUM10250E-GE3

Description
Win Source Part Number: 1016115-SUM10250E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel (TR),Cut Tape (CT) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUM10250E-GE3-ND,SUM 10250E-GE3CT,SUM1025 0E-GE3TR Base Product Number: SUM10250 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Description
Win Source Part Number: 1016115-SUM10250E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel (TR),Cut Tape (CT) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUM10250E-GE3-ND,SUM 10250E-GE3CT,SUM1025 0E-GE3TR Base Product Number: SUM10250 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1016115-SUM10250E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1016115-SUM10250E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1016115-SUM10250E-GE3
Win Source Part Number: 1016115-SUM10250E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel (TR),Cut Tape (CT) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUM10250E-GE3-ND,SUM 10250E-GE3CT,SUM1025 0E-GE3TR Base Product Number: SUM10250 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1016115-SUM10250E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: ThunderFET®
Package: Tape & Reel (TR),Cut Tape (CT)
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM10250E-GE3-ND,SUM10250E-GE3CT,SUM10250E-GE3TR
Base Product Number: SUM10250
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUM10250E-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUM10250E-GE3
Single FETs, MOSFETs SUM10250E-GE3
MOSFET N-CH 250V 63.5A D2PAK

MOSFET N-CH 250V 63.5A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - SUM10250E-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM10250E-GE3TR-ND
Single FETs, MOSFETs SUM10250E-GE3TR-ND
N-Channel 250V 63.5A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 250V 63.5A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SUM10250E-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM10250E-GE3CT-ND
Single FETs, MOSFETs SUM10250E-GE3CT-ND
N-Channel 250V 63.5A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 250V 63.5A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
MOSFET Transistor 278-SUM10250E-GE3
Power Field-Effect Transistor, Product overview: SUM10250E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM10250E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SUM10250E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM10250E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM10250E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM10250E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM10250E-GE3
MOSFET N-CH 250V 63.5A D2PAK

MOSFET N-CH 250V 63.5A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 250V Vds 20V Vgs D2PAK (TO-263)

MOSFET 250V Vds 20V Vgs D2PAK (TO-263)

Buy Now Datasheet
Mosfet, N-Ch, 250V, 63.5A, 175Deg , 375W Rohs Compliant Vishay - 75AH9269 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 63.5A, 175Deg , 375W Rohs Compliant Vishay
75AH9269
Mosfet, N-Ch, 250V, 63.5A, 175Deg , 375W Rohs Compliant Vishay 75AH9269
MOSFET, N-CH, 250V, 63.5A, 175DEG , 375W ROHS COMPLIANT: YES

MOSFET, N-CH, 250V, 63.5A, 175DEG , 375W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1016115-SUM10250E-GE3 SUM10250E-GE3 SUM10250E-GE3TR-ND 278-SUM10250E-GE3 SUM10250E-GE3 SUM10250E-GE3 75AH9269
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 250V, 63.5A, 175Deg , 375W Rohs Compliant Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 375000 milliwatts 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3
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