Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM09N20-270-E3 SUM09N20-270-E3

Description
Manufacturer: Vishay Win Source Part Number: 128202-SUM09N20-270- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 580pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 128202-SUM09N20-270- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 580pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM09N20-270-E3 - 128202-SUM09N20-270-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM09N20-270-E3
128202-SUM09N20-270-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM09N20-270-E3 128202-SUM09N20-270-E3
Manufacturer: Vishay Win Source Part Number: 128202-SUM09N20-270- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 580pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 128202-SUM09N20-270-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 580pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SUM09N20-270-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUM09N20-270-E3TR-ND
Single FETs, MOSFETs SUM09N20-270-E3TR-ND
N-Channel 200V 9A (Tc) 3.75W (Ta), 60W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 200V 9A (Tc) 3.75W (Ta), 60W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Singapore
200V 9A MOSFET Transistor
278-SUM09N20-270-E3
200V 9A MOSFET Transistor 278-SUM09N20-270-E3
MOSFET N-CH 200V 9A TO263 Product overview: SUM09N20-270-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM09N20-270-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 9A TO263 Product overview: SUM09N20-270-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM09N20-270-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUM09N20-270-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUM09N20-270-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUM09N20-270-E3
MOSFET N-CH 200V 9A TO263

MOSFET N-CH 200V 9A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 128202-SUM09N20-270-E3 SUM09N20-270-E3TR-ND 278-SUM09N20-270-E3 SUM09N20-270-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM09N20-270-E3 Single FETs, MOSFETs 200V 9A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 3750 to 60000 milliwatts 3750 milliwatts
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