The 1277685-SUG80050E-GE3 is an N-Channel MOSFET from Win Source Electronics, designed for high-performance applications. It features a maximum drain-source voltage of 150 V and a continuous drain current rating of 100 A at a case temperature of 25 ¬8C. The device exhibits a low on-state resistance of 5.4 mOc at a gate-source voltage of 10 V and a drain current of 20 A, making it suitable for efficient power management. This MOSFET has a maximum power dissipation of 500 W at 25 ¬8C and can operate within a temperature range of -55 ¬8C to 175 ¬8C. The total gate charge is specified at 165 nC when driven at 10 V, which contributes to its suitability for fast switching applications. The device is packaged in a TO-247 case, facilitating through-hole mounting. Applications for this MOSFET include synchronous rectification, power supplies, DC/AC inverters, DC/DC converters, solar micro inverters, and motor drive switches. The product is lead-free and halogen-free, aligning with modern environmental standards.
Win Source Part Number: 1277685-SUG80050E-GE
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 75 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUG80050E-GE3TR,SUG8
Base Product Number: SUG80050
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 150V 100A (Tc) 500W (Tc) Through Hole TO-247AC
MOSFET 150V Vds 20V Vgs TO-247
MOSFET N-CH 150V 100A TO247AC
MOSFET, N-CH, 150V, 100A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-Channel 150V 100A 3-Pin TO-247
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277685-SUG80050E-GE3 | SUG80050E-GE3-ND | SUG80050E-GE3 | SUG80050E-GE3 | 15AC8716 | 880-SUG80050E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 150V, 100A, To-247; Transistor Polarity Vishay | MOSFET N-Channel 150V 100A 3-Pin TO-247 |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| Packing Method | Tube; Tube | Tube; Tube | ||||
| IDSS | 100000 milliamps |
