The 1277685-SUG80050E-GE3 is an N-Channel MOSFET from Win Source Electronics, designed for high-performance applications. It features a maximum drain-source voltage of 150 V and a continuous drain current rating of 100 A at a case temperature of 25 ¬8C. The device exhibits a low on-state resistance of 5.4 mOc at a gate-source voltage of 10 V and a drain current of 20 A, making it suitable for efficient power management. This MOSFET has a maximum power dissipation of 500 W at 25 ¬8C and can operate within a temperature range of -55 ¬8C to 175 ¬8C. The total gate charge is specified at 165 nC when driven at 10 V, which contributes to its suitability for fast switching applications. The device is packaged in a TO-247 case, facilitating through-hole mounting. Applications for this MOSFET include synchronous rectification, power supplies, DC/AC inverters, DC/DC converters, solar micro inverters, and motor drive switches. The product is lead-free and halogen-free, aligning with modern environmental standards.
Win Source Part Number: 1277685-SUG80050E-GE
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 75 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUG80050E-GE3TR,SUG8
Base Product Number: SUG80050
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Power Field-Effect Transistor, Product overview: SUG80050E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUG80050E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 150V 100A (Tc) 500W (Tc) Through Hole TO-247AC
MOSFET N-CH 150V 100A TO247AC
MOSFET 150V Vds 20V Vgs TO-247
MOSFET N-Channel 150V 100A 3-Pin TO-247
MOSFET, N-CH, 150V, 100A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277685-SUG80050E-GE3 | 278-SUG80050E-GE3 | SUG80050E-GE3-ND | SUG80050E-GE3 | SUG80050E-GE3 | 880-SUG80050E-GE3 | 15AC8716 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-Channel 150V 100A 3-Pin TO-247 | Mosfet, N-Ch, 150V, 100A, To-247; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | |||
| Packing Method | Tube; Tube | Tube; Tube | |||||
| V(BR)DSS | 150 volts |
