Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SUD90330E-GE3

Description
Win Source Part Number: 1277690-SUD90330E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUD90330E-GE3DKR,SUD 90330E-GE3TR,SUD9033 0E-GE3CT Base Product Number: SUD90330 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Description
Win Source Part Number: 1277690-SUD90330E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUD90330E-GE3DKR,SUD 90330E-GE3TR,SUD9033 0E-GE3CT Base Product Number: SUD90330 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277690-SUD90330E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277690-SUD90330E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277690-SUD90330E-GE3
Win Source Part Number: 1277690-SUD90330E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: ThunderFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SUD90330E-GE3DKR,SUD 90330E-GE3TR,SUD9033 0E-GE3CT Base Product Number: SUD90330 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Win Source Part Number: 1277690-SUD90330E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUD90330E-GE3DKR,SUD90330E-GE3TR,SUD90330E-GE3CT
Base Product Number: SUD90330
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SUD90330E-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD90330E-GE3DKR-ND
Single FETs, MOSFETs SUD90330E-GE3DKR-ND
N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD90330E-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD90330E-GE3TR-ND
Single FETs, MOSFETs SUD90330E-GE3TR-ND
N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD90330E-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD90330E-GE3CT-ND
Single FETs, MOSFETs SUD90330E-GE3CT-ND
N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

N-Channel 200V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD90330E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD90330E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD90330E-GE3
MOSFET N-CH 200V 35.8A TO252AA

MOSFET N-CH 200V 35.8A TO252AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V Vds 20V Vgs TO-252

MOSFET 200V Vds 20V Vgs TO-252

Buy Now Datasheet
Mosfet, N-Ch, 200V, 35.8A, To-252; Transistor Polarity Vishay - 37AC0930 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 35.8A, To-252; Transistor Polarity Vishay
37AC0930
Mosfet, N-Ch, 200V, 35.8A, To-252; Transistor Polarity Vishay 37AC0930
MOSFET, N-CH, 200V, 35.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:35.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0312ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 200V, 35.8A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:35.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0312ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277690-SUD90330E-GE3 SUD90330E-GE3DKR-ND SUD90330E-GE3 SUD90330E-GE3 37AC0930
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 200V, 35.8A, To-252; Transistor Polarity Vishay
Polarity N-Channel N-Channel
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