Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Product overview: SUD50P10-43L-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 36.4A, 100V, 0.043ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 36.4A, 100V, 0.043ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50P10-43L-GE3
Manufacturer: Vishay
Win Source Part Number: 042962-SUD50P10-43L-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 37.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 4600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 43 mOhm @ 9.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
P-Channel 100V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252
P-Channel 100V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252
P-Channel 100V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252
MOSFET P-CH 100V 37.1A TO252
MOSFET, P-CH, 100V, 36.4A, TO-252 ROHS COMPLIANT: YES
MOSFET P-CH 100V 37.1A TO252
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SUD50P10-43L-GE3 | 042962-SUD50P10-43L-GE3 | SUD50P10-43L-GE3CT-ND | SUD50P10-43L-GE3 | SUD50P10-43L-GE3 | 57AJ0778 | SUD50P10-43L-GE3 |
| Product Name | P-Channel 36.4A 100V 0.043ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P10-43L-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 100V, 36.4A, To-252 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 136000 milliwatts | 8300 to 136000 milliwatts | 8300 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| V(BR)DSS | 100 volts | 100 volts |
