Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P08-26-E3 SUD50P08-26-E3

Description
Manufacturer: Vishay Win Source Part Number: 057008-SUD50P08-26-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 5160pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 12.9A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 057008-SUD50P08-26-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 5160pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 12.9A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P08-26-E3 - 057008-SUD50P08-26-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P08-26-E3
057008-SUD50P08-26-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P08-26-E3 057008-SUD50P08-26-E3
Manufacturer: Vishay Win Source Part Number: 057008-SUD50P08-26-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 5160pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 12.9A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 057008-SUD50P08-26-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 5160pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 12.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD50P08-26-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD50P08-26-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD50P08-26-E3
MOSFET P-CH 80V 50A TO252

MOSFET P-CH 80V 50A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 057008-SUD50P08-26-E3 SUD50P08-26-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P08-26-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 80 volts
PD 8300 to 136000 milliwatts
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