Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N10-18P-E3 SUD50N10-18P-E3

Description
Manufacturer: Vishay Win Source Part Number: 212448-SUD50N10-18P- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.2A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2600pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 212448-SUD50N10-18P- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.2A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2600pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N10-18P-E3 - 212448-SUD50N10-18P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N10-18P-E3
212448-SUD50N10-18P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N10-18P-E3 212448-SUD50N10-18P-E3
Manufacturer: Vishay Win Source Part Number: 212448-SUD50N10-18P- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.2A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2600pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 212448-SUD50N10-18P-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.2A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18.5 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
100V 8.2A 50A TO252 MOSFET Transistor
278-SUD50N10-18P-E3
100V 8.2A 50A TO252 MOSFET Transistor 278-SUD50N10-18P-E3
MOSFET N-CH 100V 8.2A/50A TO252 Product overview: SUD50N10-18P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.2A, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.2A, 50A, TO252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N10-18P-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 8.2A/50A TO252 Product overview: SUD50N10-18P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.2A, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.2A, 50A, TO252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N10-18P-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - SUD50N10-18P-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD50N10-18P-E3
Single FETs, MOSFETs SUD50N10-18P-E3
MOSFET N-CH 100V 8.2A/50A TO252

MOSFET N-CH 100V 8.2A/50A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD50N10-18P-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50N10-18P-E3-ND
Single FETs, MOSFETs SUD50N10-18P-E3-ND
N-Channel 100V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W (Tc) Surface Mount TO-252AA

N-Channel 100V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD50N10-18P-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD50N10-18P-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD50N10-18P-E3
MOSFET N-CH 100V 8.2A/50A TO252

MOSFET N-CH 100V 8.2A/50A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 212448-SUD50N10-18P-E3 278-SUD50N10-18P-E3 SUD50N10-18P-E3 SUD50N10-18P-E3-ND SUD50N10-18P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N10-18P-E3 100V 8.2A 50A TO252 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3000 to 136400 milliwatts 3000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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