60V 50A N-Channel Power MOSFET, 9.3mR Rds(on), TO-252 Product overview: SUD50N06-09L-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 50A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N06-09L-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1104105-SUD50N06-09L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Family Name: SUD50N06-09L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TK60S06K3L; TK60S06K3L(T6L1,NQ; FDD86580-F085; ATP214-TL-H;
Introduction Date: October 03, 2002
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
N-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
N-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
MOSFET N-CH 60V 50A TO252
MOSFET N-CH 60V 50A TO252
MOSFET 60V 50A 136W 9.3mohm @ 10V
MOSFET, N CHANNEL, 60V, 50A, TO-252-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:136W RoHS Compliant: Yes
MOSFET Transistor, N Channel, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 50A, TO-252; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:50A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.0074OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:2V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SUD50N06-09L-E3 | 1104105-SUD50N06-09L-E3 | SUD50N06-09L-E3TR-ND | SUD50N06-09L-E3 | SUD50N06-09L-E3 | SUD50N06-09L-E3 | 29X0562 | 62M0220 | 22266207 |
| Product Name | N-Channel 60V 50A TO-252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N06-09L-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 60V, 50A, To-252-3, Full Reel; Channel Type Vishay | Mosfet Transistor, N Channel, 50 A, 60 V, 0.0074 Ohm, 10 V, 2 V Rohs Compliant Vishay | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 136000 milliwatts | 3000 to 136000 milliwatts | 3000 milliwatts | 136000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| V(BR)DSS | 60 volts | 60 volts |
