Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N06-07L-GE3 SUD50N06-07L-GE3

Description
Manufacturer: Vishay Win Source Part Number: 138418-SUD50N06-07L- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 96A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 144nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.4 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 138418-SUD50N06-07L- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 96A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 144nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.4 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N06-07L-GE3 - 138418-SUD50N06-07L-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N06-07L-GE3
138418-SUD50N06-07L-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N06-07L-GE3 138418-SUD50N06-07L-GE3
Manufacturer: Vishay Win Source Part Number: 138418-SUD50N06-07L- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 96A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 144nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.4 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 138418-SUD50N06-07L-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 96A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 144nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.4 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore
60V 96A TO252 MOSFET Transistor
278-SUD50N06-07L-GE3
60V 96A TO252 MOSFET Transistor 278-SUD50N06-07L-GE3
MOSFET N-CH 60V 96A TO252 Product overview: SUD50N06-07L-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 96A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 96A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N06-07L-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 96A TO252 Product overview: SUD50N06-07L-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 96A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 96A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N06-07L-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD50N06-07L-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD50N06-07L-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD50N06-07L-GE3
MOSFET N-CH 60V 96A TO252

MOSFET N-CH 60V 96A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 138418-SUD50N06-07L-GE3 278-SUD50N06-07L-GE3 SUD50N06-07L-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N06-07L-GE3 60V 96A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 136000 milliwatts 136000 milliwatts
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