Vishay Intertechnology, Inc. N-Channel 50 A 60 V 0.0148 ohm MOSFET Transistor SUD50N06-07L-E3

TRANSISTOR 50 A, 60 V, 0.0148 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Product overview: SUD50N06-07L-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50 A, 60 V, 0.0148 ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50 A, 60 V, 0.0148 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N06-07L-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1104103-SUD50N06-07L-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 96A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 144nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.4 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management