Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N04-37P-T4-E3 SUD50N04-37P-T4-E3

Description
Manufacturer: Vishay Win Source Part Number: 1104102-SUD50N04-37P -T4-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 10.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 5.4A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 640pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1104102-SUD50N04-37P -T4-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 10.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 5.4A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 640pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N04-37P-T4-E3 - 1104102-SUD50N04-37P-T4-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N04-37P-T4-E3
1104102-SUD50N04-37P-T4-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N04-37P-T4-E3 1104102-SUD50N04-37P-T4-E3
Manufacturer: Vishay Win Source Part Number: 1104102-SUD50N04-37P -T4-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 10.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 5.4A (Ta), 8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 640pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104102-SUD50N04-37P-T4-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 10.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 5.4A (Ta), 8A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 640pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
40V 5.4A TO252 MOSFET Transistor
285-SUD50N04-37P-T4-E3
40V 5.4A TO252 MOSFET Transistor 285-SUD50N04-37P-T4-E3
MOSFET N-CH 40V 5.4A TO252 Product overview: SUD50N04-37P-T4-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.4A, TO252, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SUD50N04-37P-T4- E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 5.4A TO252 Product overview: SUD50N04-37P-T4-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 5.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 5.4A, TO252, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SUD50N04-37P-T4-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1104102-SUD50N04-37P-T4-E3 285-SUD50N04-37P-T4-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N04-37P-T4-E3 40V 5.4A TO252 MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 2000 to 10800 milliwatts 10800 milliwatts
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